IEEE - Institute of Electrical and Electronics Engineers, Inc. - Greater than 70% PAE enhancement-mode GaAs HJFET power amplifier MMIC with extremely low leakage current

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): S. Yoshida ; Y. Wakabayashi ; M. Kohno ; K. Uemura
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 3
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779598
Regular:

A fully enhancement-mode heterojunction FET (E-HJFET) with Vth of +0.25 V has been newly developed. The E-HJFET exhibited 79.6% power added efficiency (PAE) at 31.5 dBm output power level and 11.5... View More

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