IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 150 W E-mode GaAs power FET with 35% PAE for W-CDMA base station

1999 IEEE MTT-S International Microwave Symposium Digest

Author(s): Y. Tateno ; H. Takahashi ; T. Igarashi ; J. Fukaya
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Anaheim, CA, USA, USA
Conference Date: 13 June 1999
Volume: 3
Page Count: 4
ISBN (Paper): 0-7803-5135-5
DOI: 10.1109/MWSYM.1999.779576
Regular:

A 150 W power FET for W-CDMA base stations has been developed. This FET combines four enhancement-mode (E-mode) 40 W FET chips newly developed and implemented in a package in a push-pull... View More

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