IEEE - Institute of Electrical and Electronics Engineers, Inc. - A compact SOI model for fully-depleted and partially-depleted 0.25 /spl mu/m SIMOX devices

Proceedings of International Conference on Microelectronic Test Structures

Author(s): Ping Chen ; Zhihong Liu ; Chune-Sin Yeh ; Gang Zhang ; Nishimura, K. ; Shimaya, M. ; Komatsu, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Goteborg, Sweden, Sweden
Conference Date: 15 March 1999
Page(s): 222 - 226
ISBN (Paper): 0-7803-5270-X
DOI: 10.1109/ICMTS.1999.766248
Regular:

A compact SOI MOSFET model based on the Bsim3v3 bulk model with new features of effective substrate bias and transition voltage concepts to cover the transition behavior from partially-depleted to... View More

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