IEEE - Institute of Electrical and Electronics Engineers, Inc. - Measurement of V/sub T/ and L/sub eff/ using MOSFET gate-substrate capacitance

Proceedings of International Conference on Microelectronic Test Structures

Author(s): Lau, M.M. ; Chiang, C.Y.T. ; Yeow, Y.T. ; Yao, Z.Q.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Goteborg, Sweden, Sweden
Conference Date: 15 March 1999
Page(s): 152 - 155
ISBN (Paper): 0-7803-5270-X
DOI: 10.1109/ICMTS.1999.766234
Regular:

This paper describes and demonstrates new methods for the measurement of MOSFET threshold voltage and effective channel length using gate-to-substrate capacitance C/sub gb/. The measurement does... View More

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