IEEE - Institute of Electrical and Electronics Engineers, Inc. - Geometry modeling method for narrow/short and narrow MOSFETs

Proceedings of International Conference on Microelectronic Test Structures

Author(s): Sekine, S. ; Sugiyama, M. ; Saito, N.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Goteborg, Sweden, Sweden
Conference Date: 15 March 1999
Page(s): 125 - 130
ISBN (Paper): 0-7803-5270-X
DOI: 10.1109/ICMTS.1999.766229
Regular:

In this paper, we present a new physics-based model for narrow width MOSFETs that accounts for the LOCOS narrow width effect and the webbing effect. The model is based on physical geometry changes... View More

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