IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved method for the oxide thickness extraction in MOS structures with ultra-thin gate dielectrics

Proceedings of International Conference on Microelectronic Test Structures

Author(s): Ghibaudo, G. ; Bruyere, S. ; Devoivre, T. ; DeSalvo, B. ; Vincent, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Goteborg, Sweden, Sweden
Conference Date: 15 March 1999
Page(s): 111 - 116
ISBN (Paper): 0-7803-5270-X
DOI: 10.1109/ICMTS.1999.766226
Regular:

An improved method for the assessment of the oxide thickness applicable to advanced CMOS technologies is proposed. To this end, a proper combination of Maserjian's technique (Maserjian et al.,... View More

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