IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new extraction method for BSIM3v3 model parameters of RF silicon MOSFETs

Proceedings of International Conference on Microelectronic Test Structures

Author(s): Seonghearn Lee ; Hyun Kyu Yu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Goteborg, Sweden, Sweden
Conference Date: 15 March 1999
Page(s): 95 - 98
ISBN (Paper): 0-7803-5270-X
DOI: 10.1109/ICMTS.1999.766223
Regular:

A new parameter extraction technique utilizing S-parameter data at the GHz range is proposed for a SPICE BSIM3v3 model of an RF MOSFET. The extraction of capacitance parameters is carried out... View More

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