IEEE - Institute of Electrical and Electronics Engineers, Inc. - Identification of MOS oxide defect location with a spatial resolution less than 0.1 /spl mu/m using photoemission microscope

Proceedings of International Conference on Microelectronic Test Structures

Author(s): Ohzone, T. ; Yuzaki, M. ; Matsuda, T. ; Kameda, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Goteborg, Sweden, Sweden
Conference Date: 15 March 1999
Page(s): 89 - 94
ISBN (Paper): 0-7803-5270-X
DOI: 10.1109/ICMTS.1999.766222
Regular:

The maximum photoemission position corresponding to an oxide defect was determined with a spatial resolution of less than 0.1 /spl mu/m by a combination of an improved photoemission microscope... View More

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