IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study of low frequency noise in the 0.18 /spl mu/m silicon CMOS transistors

Proceedings of International Conference on Microelectronic Test Structures

Author(s): Boutchacha, T. ; Ghibaudo, G. ; Belmekki, B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Goteborg, Sweden, Sweden
Conference Date: 15 March 1999
Page(s): 84 - 88
ISBN (Paper): 0-7803-5270-X
DOI: 10.1109/ICMTS.1999.766221
Regular:

The low frequency noise in 0.18 /spl mu/m NMOS and PMOS devices is investigated. The devices used throughout this work have been fabricated according to a dual CMOS process with N/sup +/ and P/sup... View More

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