IEEE - Institute of Electrical and Electronics Engineers, Inc. - Laser doping technique for II-VI semiconductors, ZnSe and CdTe

Proceedings of the 5th Asian Symposium on Information Display. ASID'99

Author(s): Hatanaka, Y. ; Aoki, T. ; Niraula, M. ; Aoki, Y. ; Nakanishi, Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Hsinchu, Taiwan, Taiwan
Conference Date: 19 March 1999
Page(s): 65 - 68
ISBN (Paper): 957-97347-9-8
DOI: 10.1109/ASID.1999.762715
Regular:

The p-type doping of wide band gap II-VI semiconductors is a key technology for the formation of ohmic contacts with metal electrodes in device fabrication. Using alkaline metal compounds such as... View More

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