IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electro-thermal instability in low voltage power MOS: Experimental characterization

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99

Author(s): Breglio, G. ; Frisina, F. ; Magri, A. ; Spirito, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Toronto, Ont., Canada, Canada
Conference Date: 26 May 1999
Page(s): 233 - 236
ISBN (Paper): 0-7803-5290-4
ISSN (Paper): 1063-6854
DOI: 10.1109/ISPSD.1999.764106
Regular:

In this paper, we present experimental results of dynamic thermal mapping on a new class of low voltage high current power MOSFETs. The reported results underline that, as in the case of power... View More

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