IEEE - Institute of Electrical and Electronics Engineers, Inc. - MOS bipolar gate IGBT operation

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99

Author(s): Bobde, M.D. ; Minato, T. ; Thapar, N. ; Baliga, B.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Toronto, Ont., Canada, Canada
Conference Date: 26 May 1999
Page(s): 181 - 184
ISBN (Paper): 0-7803-5290-4
ISSN (Paper): 1063-6854
DOI: 10.1109/ISPSD.1999.764092
Regular:

A new IGBT with a P/sup +/ diverter which is connected to the gate through a series resistance, is proposed in this paper. It was observed from simulations that providing a small current through... View More

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