IEEE - Institute of Electrical and Electronics Engineers, Inc. - A physics-based model for the avalanche ruggedness of power diodes

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99

Author(s): Hurkx, G.A.M. ; Koper, N.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Toronto, Ont., Canada, Canada
Conference Date: 26 May 1999
Page(s): 169 - 172
ISBN (Paper): 0-7803-5290-4
ISSN (Paper): 1063-6854
DOI: 10.1109/ISPSD.1999.764089
Regular:

The avalanche ruggedness of power diodes is investigated by experiments and numerical device simulations. An analytical model is developed that describes the dependence of the maximum allowable... View More

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