IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 4H-SiC trench MOS barrier Schottky (TMBS) rectifier

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99

Author(s): Khemka, V. ; Ananthan, V. ; Chow, T.P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Toronto, Ont., Canada, Canada
Conference Date: 26 May 1999
Page(s): 165 - 168
ISBN (Paper): 0-7803-5290-4
ISSN (Paper): 1063-6854
DOI: 10.1109/ISPSD.1999.764088
Regular:

We present the first experimental demonstration of a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier. The forward and reverse characteristics of the TMBS devices are studied as a function of... View More

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