IEEE - Institute of Electrical and Electronics Engineers, Inc. - Wirebond reliability in IGBT-power modules: application of high resolution strain and temperature mapping

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99

Author(s): Mehrotra, V. ; Jun He ; Dadkhah, M.S. ; Rugg, K. ; Shaw, M.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Toronto, Ont., Canada, Canada
Conference Date: 26 May 1999
Page(s): 113 - 116
ISBN (Paper): 0-7803-5290-4
ISSN (Paper): 1063-6854
DOI: 10.1109/ISPSD.1999.764076
Regular:

A fracture mechanics-based model has been developed for the reliability of wirebonds in IGBT-based power modules. Initial correlation of the model has been achieved based upon measurements of... View More

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