IEEE - Institute of Electrical and Electronics Engineers, Inc. - 0.35 /spl mu/m, 43 /spl mu//spl Omega/cm/sup 2/, 6 m/spl Omega/ power MOSFET to power future microprocessor

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99

Author(s): Sun, N.X. ; Huang, A.Q. ; Lee, F.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Toronto, Ont., Canada, Canada
Conference Date: 26 May 1999
Page(s): 77 - 80
ISBN (Paper): 0-7803-5290-4
ISSN (Paper): 1063-6854
DOI: 10.1109/ISPSD.1999.764058
Regular:

In this paper, a lateral power MOSFET using 0.35 /spl mu/m VLSI CMOS technology is demonstrated to have a 6 m/spl Omega/ on-resistance and a gate charge of 2.7 nC. For high frequency, low voltage... View More

Advertisement