IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication of a double-side IGBT by very low temperature wafer bonding

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99

Author(s): Hobart, K.D. ; Kub, F.J. ; Dolny, G. ; Zafrani, M. ; Neilson, J.M. ; Gladish, J. ; McLachlan, C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Toronto, Ont., Canada, Canada
Conference Date: 26 May 1999
Page(s): 45 - 48
ISBN (Paper): 0-7803-5290-4
ISSN (Paper): 1063-6854
DOI: 10.1109/ISPSD.1999.764042
Regular:

A bidirectional double-side IGBT has been successfully fabricated by very low temperature direct wafer bonding for the first time. The utility of the second MOS gate to control hole injection is... View More

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