IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of Se ion implantation for GaAs very high speed gate array

Proceedings of International Conference on Microwave and Millimeter Wave Technology

Author(s): Zhang Jianghong ; Song Macheng ; Hao Jingchen ; Lian Yaguang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Beijing, China, China
Conference Date: 18 August 1998
Page(s): 714 - 717
ISBN (Paper): 0-7803-4308-5
DOI: 10.1109/ICMMT.1998.768389
Regular:

Se/sup +/-implanted GaAs substrates were performed at room temperature. We investigated the effects of incident energy, the ion dose and the incident angle. The rapid thermal annealing (RTA)... View More

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