IEEE - Institute of Electrical and Electronics Engineers, Inc. - Properties and defects study on GaAs based epitaxy materials

Proceedings of International Conference on Microwave and Millimeter Wave Technology

Author(s): Cui Liqi ; Wenjun Zhang ; Ronggui Zhang ; Li Xiaobai
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Beijing, China, China
Conference Date: 18 August 1998
Page(s): 706 - 709
ISBN (Paper): 0-7803-4308-5
DOI: 10.1109/ICMMT.1998.768387
Regular:

This paper presents the R&D of GaAs-based heterojunction materials, describes mainly the material properties and the characterization techniques. The microwave device has been fabricated with the... View More

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