IEEE - Institute of Electrical and Electronics Engineers, Inc. - 8 mm GaAs power monolithic integrated circuit

Proceedings of International Conference on Microwave and Millimeter Wave Technology

Author(s): Zhang MuYi ; Zhang Yuqing
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Beijing, China, China
Conference Date: 18 August 1998
Page(s): 222 - 225
ISBN (Paper): 0-7803-4308-5
DOI: 10.1109/ICMMT.1998.768265
Regular:

The design, fabrication and performance measurement of an 8 mm monolithic IC based on a GaAs MESFET device with a 0.4 /spl mu/m gate width are presented. The performance characteristics of the... View More

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