IEEE - Institute of Electrical and Electronics Engineers, Inc. - T gates and selective etching techniques applied to millimeter wave-band PHEMT process

Proceedings of International Conference on Microwave and Millimeter Wave Technology

Author(s): Jia Hai Qiang ; Xing Dong ; Li Xiao Bai ; Song Jun Kui
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Beijing, China, China
Conference Date: 18 August 1998
Page(s): 146 - 149
ISBN (Paper): 0-7803-4308-5
DOI: 10.1109/ICMMT.1998.768249
Regular:

We have fabricated a PHEMT with 0.1-0.3 /spl mu/m T-gates by a new method. With parameter control, such as time, etc., and transverse growth on the gate length, we have obtained 0.1-0.3 /spl mu/m... View More

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