IEEE - Institute of Electrical and Electronics Engineers, Inc. - Power GaAs FET temperature dependent modeling and circuit simulation validation

Proceedings of International Conference on Microwave and Millimeter Wave Technology

Author(s): Gao Xuebang ; Guo Binghui
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Beijing, China, China
Conference Date: 18 August 1998
Page(s): 116 - 119
ISBN (Paper): 0-7803-4308-5
DOI: 10.1109/ICMMT.1998.768240
Regular:

A novel power GaAs FET large-signal modeling method is presented in this paper. The method is based on the pulsed I-V measurements without pre-bias DC at different temperatures. The model... View More

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