IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new InGaP-GaAs double delta-doped heterojunction bipolar transistor (D/sup 3/HBT)

Proceedings of International Conference on Microwave and Millimeter Wave Technology

Author(s): Wen-Chau Liu ; Shiou-Ying Cheng ; Wen-Lung Chang ; Hsi-Jen Pan ; Yung-Hsin Shie
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Beijing, China, China
Conference Date: 18 August 1998
Page(s): 100 - 103
ISBN (Paper): 0-7803-4308-5
DOI: 10.1109/ICMMT.1998.768236
Regular:

The double delta-doped heterojunction bipolar transistor (D/sup 3/HBT) is successfully fabricated with improved current-voltage characteristics by employing the insertion of delta-doped layers at... View More

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