IEEE - Institute of Electrical and Electronics Engineers, Inc. - Selective gate recess etching of GaInP/InGaAs/GaAs PHEMT using BCl/sub 3/+Ar plasma

Proceedings of International Conference on Microwave and Millimeter Wave Technology

Author(s): Kuo, C.W. ; Su, Y.K. ; Chang, S.J. ; Kuan, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Beijing, China, China
Conference Date: 18 August 1998
Page(s): 92 - 95
ISBN (Paper): 0-7803-4308-5
DOI: 10.1109/ICMMT.1998.768233
Regular:

GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) were fabricated by BCl/sub 3/+Ar plasma etching. Photoreflectance (PR) was used to evaluate the quality of the etching... View More

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