IEEE - Institute of Electrical and Electronics Engineers, Inc. - Novel GaAs-based devices for microwave and photonic applications above 100 GHz

Proceedings of International Conference on Microwave and Millimeter Wave Technology

Author(s): Kordos, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Beijing, China, China
Conference Date: 18 August 1998
Page(s): 88 - 91
ISBN (Paper): 0-7803-4308-5
DOI: 10.1109/ICMMT.1998.768232
Regular:

Recent results related to the two novel GaAs-based devices are described. First one is an InGaAs-InP pseudomorphic HEMT which consists of Al-free material structure. From the analysis results,... View More

Advertisement