IEEE - Institute of Electrical and Electronics Engineers, Inc. - Relation between two-dimensional electron gas density and the size of material structure of planar doped HEMT and PHEMT

Proceedings of International Conference on Microwave and Millimeter Wave Technology

Author(s): Li Xiao Bai ; Li Wei Ying
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Beijing, China, China
Conference Date: 18 August 1998
Page(s): 80 - 83
ISBN (Paper): 0-7803-4308-5
DOI: 10.1109/ICMMT.1998.768229
Regular:

The relation has been described between the structure sizes of material at the spacer layer, /spl delta/-modulation doped layer, barrier depleted layer and 2DEG density at the heterojunction... View More

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