IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nonlocal transport effects in hyperabrupt GaAs IMPATT diodes for operation at and beyond 200 GHz

Proceedings of International Conference on Microwave and Millimeter Wave Technology

Author(s): Liebig, D. ; Schunemann, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Beijing, China, China
Conference Date: 18 August 1998
Page(s): 71 - 74
ISBN (Paper): 0-7803-4308-5
DOI: 10.1109/ICMMT.1998.768227
Regular:

A physical ensemble particle simulation has been applied to investigate the microscopical carrier transport effects occurring in abruptly doped double low-high-low IMPATT-structures. A study of... View More

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