IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reliability of Al/Ti gate AlGaAs/GaAs power HFETs in hydrogen gas

1998 GaAs Reliability Workshop. Proceedings

Author(s): Menozzi, R. ; Gaddi, R. ; Nava, F. ; Lanzieri, C. ; Canali, C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Atlanta, GA, USA, USA
Conference Date: 1 November 1998
Page(s): 75 - 81
ISBN (Paper): 0-7908-0065-9
DOI: 10.1109/GAASRW.1998.768040
Regular:

Here we approach for the first time the problem of hydrogen poisoning for Al/Ti-gate (Pt-free) AlGaAs/GaAs power HFETs. Throughout the stress, we have monitored the changes of I/sub DSS/, g/sub... View More

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