IEEE - Institute of Electrical and Electronics Engineers, Inc. - 2-D device numerical simulations of gate sinking failure mechanism in pHEMT

1998 GaAs Reliability Workshop. Proceedings

Author(s): Kaper, V. ; Gao, F. ; Ersland, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Atlanta, GA, USA, USA
Conference Date: 1 November 1998
Page(s): 63 - 68
ISBN (Paper): 0-7908-0065-9
DOI: 10.1109/GAASRW.1998.768038
Regular:

The gate sinking failure mechanism (interdiffusion of metal atoms from the gate into semiconductor) was studied for M/A-COM's 0.5 /spl mu/m pHEMT process using a Silvaco 2-D numerical simulator.... View More

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