IEEE - Institute of Electrical and Electronics Engineers, Inc. - Life testing of GaAs/AlGaAs heterojunction bipolar transistors

1998 GaAs Reliability Workshop. Proceedings

Author(s): Mittereder, J.A. ; Roussos, J.A. ; Anderson, W.T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Atlanta, GA, USA, USA
Conference Date: 1 November 1998
Page(s): 40 - 45
ISBN (Paper): 0-7908-0065-9
DOI: 10.1109/GAASRW.1998.768034
Regular:

GaAs/AlGaAs heterojunction bipolar transistors (HBTs) are life tested under accelerated DC and high temperature storage conditions. The experimental procedures, measurement results, and... View More

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