IEEE - Institute of Electrical and Electronics Engineers, Inc. - A study of interface states of directly bonded silicon-on-insulator (SOI) structures

1998 4th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-98

Author(s): Buldygin, S.A. ; Bulycheva, T.V. ; Golod, S.V. ; Drofa, A.T. ; Kamaev, G.N. ; Skok, E.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Novosibirsk, Russia, Russia
Conference Date: 23 September 1998
Page(s): 49 - 53
ISBN (Paper): 0-7803-4938-5
DOI: 10.1109/APEIE.1998.768906
Regular:

In this paper, experimental data on the temperature-dependent transient photoconductivity obtained on bonded SOI structures are presented. It is shown that, during the bonding process at... View More

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