IEEE - Institute of Electrical and Electronics Engineers, Inc. - Practical model for electrical properties of highly doped p-type polysilicon

1998 4th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-98

Author(s): Spoutai, S.V.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Conference Location: Novosibirsk, Russia, Russia
Conference Date: 23 September 1998
Page(s): 27 - 29
ISBN (Paper): 0-7803-4938-5
DOI: 10.1109/APEIE.1998.768900
Regular:

This paper describes a new approach to practical modelling of electrical properties of polycrystalline semiconductors. The model combines the electro-physical properties of microcrystalline... View More

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