IEEE - Institute of Electrical and Electronics Engineers, Inc. - Highly doped n-type silicon theoretical optimization

1997 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference. 'Linking to the Next Century'. Proceedings

Author(s): Stem, N. ; Cid, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Natal, Brazil, Brazil
Conference Date: 11 August 1997
Volume: 2
ISBN (Paper): 0-7803-4165-1
DOI: 10.1109/SBMOMO.1997.648834
Regular:

Considering the recent modification of n-type highly doped silicon parameters, this work has been based on one-dimensional models with analytical solutions. In order to obtain a good accuracy, a... View More

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