IEEE - Institute of Electrical and Electronics Engineers, Inc. - Microwave tunnelling in semiconductor heterostructures through a magnetic barrier

1997 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference. 'Linking to the Next Century'. Proceedings

Author(s): Tarkhanian, R.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Natal, Brazil, Brazil
Conference Date: 11 August 1997
Volume: 2
ISBN (Paper): 0-7803-4165-1
DOI: 10.1109/SBMOMO.1997.648830
Regular:

A new effect is considered-resonance tunneling of microwaves through a magnetic insulating barrier between a selectively doped semiconductor heterostructure and a thick wide-gap... View More

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