IEEE - Institute of Electrical and Electronics Engineers, Inc. - A single-polysilicon quasi self-aligned npn bipolar technology with 30 GHz f/sub T/ and 40 GHz f/sub max/

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Ailloud, L. ; De Pontcharra, J. ; Vendrame, L. ; Behouche, E. ; Thomas, D. ; Blanchard, B. ; Gravier, T. ; Chantre, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 198 - 201
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647435
Regular:

A low cost high performance 0.5 /spl mu/m single-poly quasi self-aligned npn bipolar technology is described. The devices feature record f/sub T/ and f/sub max/ values of 30 GHz and 40 GHz... View More

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