IEEE - Institute of Electrical and Electronics Engineers, Inc. - A SiGe HBT BiCMOS technology for mixed signal RF applications

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Ahlgren, D.C. ; Freeman, G. ; Subbanna, S. ; Groves, R. ; Greenberg, D. ; Malinowski, J. ; Nguyen-Ngoc, D. ; Jeng, S.J. ; Stein, K. ; Schonenberg, K. ; Kiesling, D. ; Martin, B. ; Wu, S. ; Harame, D. ; Meyerson, B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 195 - 197
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647434
Regular:

We present results of IBM's Silicon Germanium HBT 0.35 /spl mu/m L/sub eff/ BiCMOS process with 3 level metal on 200 mm wafers. CMOS devices, as well as resistors, capacitors, inductors and other... View More

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