IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Jeng, S.J. ; Ahlgren, D.C. ; Berg, G.D. ; Ebersman, B. ; Freeman, G. ; Greenberg, D.R. ; Malinowski, J. ; Nguyen-Ngoc, D. ; Schonenberg, K.T. ; Stein, K.J. ; Colavito, D. ; Longstreet, M. ; Ronsheim, P. ; Subbanna, S. ; Harame, D.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 187 - 190
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647432
Regular:

We have explored the process window for polysilicon resistor in the self-aligned epi-base HBT process utilizing various structure and implant conditions. We have performed a systematic study on... View More

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