IEEE - Institute of Electrical and Electronics Engineers, Inc. - A low on-resistance 60 V MOSFET high side switch and a 30 V npn transistor based on 5 V BiCMOS process

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Kawaguchi, Y. ; Kinoshita, K. ; Nakagawa, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 151 - 154
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647423
Regular:

This paper present a 60 V MOSFET and a 30 V npn transistor based on a 5 V BiCMOS process. The proposed MOSFET on n-epi/n+ buried layer can be operated as high side switch, and can be fabricated... View More

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