IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved performance and thermal stability of interdigitated power RF bipolar transistors with nonlinear base ballasting

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Jaejune Jang ; Kan, E.C. ; Dutton, R.W. ; Arnborg, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 143 - 146
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647421
Regular:

A novel base ballasting scheme for interdigitated power RF bipolar transistors has demonstrated improved performance and thermal stability. The nonlinear ballast resistor in series with each base... View More

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