IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modelling parasitic bipolar devices in advanced smart-power technologies

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Leone, A. ; Speciale, N. ; Graffi, S. ; Masetti, G. ; Graziano, V.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 127 - 130
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647417
Regular:

In this work we present an improvement of bipolar transistor models which can correctly predict the behavior of the reverse current gain. The proposed approach is particularly useful for modelling... View More

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