IEEE - Institute of Electrical and Electronics Engineers, Inc. - Buried triple p-n junction structure in a BiCMOS technology for color detection

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Choulkha, M.B. ; Lu, G.N. ; Sedjill, M. ; Sou, G. ; Atquie, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 108 - 111
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647408
Regular:

A buried triple p-n junction structure in a BiCMOS process was investigated for color detection. A physically based model of the BTJ structure was developed. A color sensing chip was designed and... View More

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