IEEE - Institute of Electrical and Electronics Engineers, Inc. - A unified approach for hot-carrier degradation of current gain and 1/f noise of polysilicon emitter bipolar transistors

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Decoutere, S. ; Simoen, E. ; Vancuyck, G. ; Deferm, L. ; Claeys, C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 104 - 107
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647406
Regular:

A unified approach is presented and experimentally validated for the modeling of hot-carrier degradation of the DC current gain and 1/f noise of bipolar transistors under reverse emitter/base... View More

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