IEEE - Institute of Electrical and Electronics Engineers, Inc. - The impact of Ge profile shape on the operation of SiGe HBT precision voltage references

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Salmon, S.L. ; Cressler, J.D. ; Jaeger, R.C. ; Harame, D.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 100 - 103
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647366
Regular:

We analyze the effects of Ge grading on the bias and temperature characteristics of advanced UHV/CVD SiGe HBT's. Theory, device measurements, and SPICE simulations are used to investigate the... View More

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