IEEE - Institute of Electrical and Electronics Engineers, Inc. - Two dimensional simulation of transient enhanced boron out-diffusion from the base of a SiGe HBT due to an extrinsic base implant

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Hashim, M.D.R. ; Lever, R.F. ; Ashburn, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 96 - 99
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647365
Regular:

The effects of an extrinsic base implant in SiGe HBTs are investigated using two dimensional process and device simulation and measurements of collector current as a function of temperature. Point... View More

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