IEEE - Institute of Electrical and Electronics Engineers, Inc. - An advanced 0.25-/spl mu/m BiCMOS process integration technology for multi-GHz communication LSIs

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Kinoshita, Y. ; Suzuki, H. ; Nakamura, S. ; Fukaishi, M. ; Tajima, A. ; Sucmura, Y. ; Itani, T. ; Miyamoto, H. ; Fujii, H. ; Yotsuyanagi, M. ; Henmi, N. ; Yamazaki, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 72 - 75
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647359
Regular:

This paper presents an advanced BiCMOS process integration technology, which employs 0.25-/spl mu/m Ti salicide p/sup +//n/sup +/ dual gate CMOSFETs, double poly-Si self-aligned bipolar... View More

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