IEEE - Institute of Electrical and Electronics Engineers, Inc. - 0.6 /spl mu/m BiCMOS technology for RF and high speed converter applications

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Doyle, D. ; Moloney, K. ; Rohan, D. ; Feindt, S. ; Kattmann, K. ; McLoughlin, C. ; Meehan, P. ; Healy, S. ; Prendergast, J. ; O'Neill, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 64 - 67
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647357
Regular:

This paper describes how a state of the art bipolar process designed for RF applications has been successfully incorporated into a 0.6 /spl mu/m CMOS process. The resultant BiCMOS process has the... View More

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