IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design of RF integrated circuits using SiGe bipolar technology

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Gotzfried, R. ; Beisswanger, F. ; Gerlach, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 51 - 56
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647354
Regular:

We report on design aspects and the implementation of RF ICs using TEMIC's SiGe heterojunction bipolar technology. The differences between the device parameters of Si-BJT and SiGe-HBT technology... View More

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