IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 30 V complementary bipolar technology on SOI for high speed precision analog circuits

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Patel, R. ; Milan, W. ; Cooley, G. ; Corsi, M. ; Erdeljac, J. ; Hutter, L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 48 - 50
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647353
Regular:

A complementary bipolar technology with full dielectric isolation merges 30 V capable polyemitter NPN and PNP transistors with capacitors, polysilicon resistors, Schottky diodes, and fuses. A 6000... View More

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