IEEE - Institute of Electrical and Electronics Engineers, Inc. - Statistical modeling for a 0.6 /spl mu/m BiCMOS technology

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Author(s): Power, J.A. ; Kelly, S.C. ; Griffith, E.C. ; Doyle, D. ; O'Neill, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Minneapolis, MN, USA
Conference Date: 28 September 1997
Page(s): 24 - 27
ISBN (Paper): 0-7803-3916-9
ISSN (Paper): 1088-9299
DOI: 10.1109/BIPOL.1997.647348
Regular:

A methodology enabling the generation of accurate statistical circuit simulator (SPICE-level) parameter sets for a 0.6 /spl mu/m BiCMOS process is described. Conventional MOS and BJT parameter... View More

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