IEEE - Institute of Electrical and Electronics Engineers, Inc. - Back-gate bias effect in the SOI gate controlled hybrid transistor (GCHT)

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Ru Huang ; Xing Zhang ; Yue Mei Xi ; Ying Xue Li ; Yang Yuan Wang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 157 - 160
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642355
Regular:

Back-gate bias effect in SOI gate controlled hybrid transistor is discussed. Experimental results show the transconductance enhancement caused by the back-gate bias. Furthermore, the back-gate... View More

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